1 elm34601aa - n 7 - elm 3 4601a a - n uses advanced trench technology to provide excellent rds (on) and low gate charge. parameter symbol n-ch (max.) p-ch ( max.) unit note drain - s ource voltage vds 3 0 - 3 0 v gate - s ource v oltag e vgs 20 20 v conti nuous drain current ta = 25 c id 7 - 6 a ta = 70 c 6 - 5 pulsed d rain current idm 2 8 - 2 4 a 3 power dissipation t c = 25 c pd 2.0 2.0 w t c = 70 c 1 . 3 1 . 3 j unction and storage temperature range t j , t s tg - 55 to 150 - 55 to 150 c g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol device typ. max. unit note maximum junction - to - a mbient r ja n-ch 62.5 c /w maximum junction - to - a mbient r ja p -ch 62.5 c /w complementary mosfet s 2 g 2 d 2 s 1 g 1 d 1 c ircuit ? n- ch ? p - ch pin configuration so p - 8 (top vi ew) pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 n-channel p-channel ? vds = 3 0v vds= - 3 0v ? id = 7 a id= - 6 a ? rds ( on ) < 2 1 m (vgs = 1 0 v) rds(on) < 3 5 m (vgs = - 1 0 v) ? rds(on) < 32 m (vgs = 4.5 v ) rds(on) < 6 0 m (vgs = -4.5 v ) t a = 25 c . u nless otherwise noted. 4 3 2 1 5 6 7 8
2 electrical characteristics (n-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - s ource breakdown voltage bv ds s id = 25 0 a , vgs = 0v 3 0 v zero g ate voltage drain current id ss vds = 2 4 v, vgs = 0v 1 a vds = 2 0 v, vgs = 0v, t a = 55 c 10 gate - b ody leakage current igss vds = 0v, vgs = 20 v 100 n a gate t hreshold voltage vgs (th) vds = vg s , id = 25 0 a 0.8 1.5 2.5 v on s tate drain current i d (on ) vgs = 10 v, vds = 5v 2 8 a 1 static drain - s ource on - r esistance rds (on ) vgs = 10 v, id = 7 a 14 21 m 1 vgs = 4 .5v, id = 6 a 21 32 forward transconductance gfs vds = 10 v, id = 5 a 8 s 1 diode forward voltage vsd i f = 1a, vgs=0v 1 v 1 max.body - d iode c ontinuous c urrent is 3 a pulsed current ism 6 a 3 dynamic parameters input capacitance c iss vgs = 0v, vds = 10v, f = 1mh z 1700 pf output capacitance c oss 380 pf reverse transfer capacitance c r ss 260 pf switching parameters total gate charge q g vgs = 10 v, vds = 15v, id = 6 a 40 nc 2 gate - s ource charge q gs 28 nc 2 gate - d rain charge q gd 12 nc 2 turn - o n delay time td (on) vgs = 10 v, vds = 1 5 v , id = 1a rgen = 6 20 ns 2 turn - o n rise t ime t r 10 ns 2 turn - o ff delay time td ( of f ) 120 ns 2 turn - o ff fall t ime t f 35 ns 2 body - diode reverse recovery time trr if = 5 a, dif/dt = 100a / s 15.5 ns body - diode reverse recovery charge qrr 7.9 nc elm34601aa - n 7 - complem entary mosfet note : 1. p ulse test : pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4 . duty cycle 1 %. t a = 25 c . u nless otherwise noted.
3 elm34601aa - n 7 - typical electrical and thermal characteristics (n-ch) 4 may-21-2004 n- & p-channel enhancement mode field effect transistor p2103nvg sop-8 lead-free complem entary mosfet
4 elm34601aa - n 7 - 5 may-21-2004 n- & p-channel enhancement mode field effect transistor p2103nvg sop-8 lead-free niko-sem complem entary mosfet
5 elm34601aa - n 7 - electrical characteristics (p-ch) parameter symbol conditions min. typ. max. unit note static parameters drain - s ource breakdown voltage bv d ss id = - 25 0 a , vgs = 0v - 3 0 v zero g ate voltage drain current i ds s vds = - 2 4 v, vgs = 0v - 1 a vds = - 2 0 v, vgs = 0v, t a = 55 c -10 gate - b ody leakage current ig s s vds = 0v, vgs = 20 v 100 n a gate t hreshold voltage vgs (th) vds = vgs , id = - 25 0 a - 0.8 - 1. 5 - 2. 5 v on s tate drain current id (on ) vgs = - 10 v, vds = - 5v - 2 4 a 1 static drain - s ource on - r esistance rds (on ) vgs = - 10 v, id = - 6 a 28 35 m 1 vgs = - 4 .5v, id = - 5 a 44 60 forward transconductance gfs vds = - 10 v, id = - 5 a 7 s 1 diode forward voltage vsd i f = - 1a, vgs = 0 v - 1 v 1 max.body - d iode continuous c urrent is - 3 a pulsed current ism -6 a 3 dynamic parameters input capacitance c iss vgs = 0v, vds = - 10v, f = 1mh z 970 pf output capacitance c oss 370 pf reverse transfer capacitance c r ss 180 pf switching parameters total gate charge q g vgs = - 10 v, vds = - 15v id = - 5 a 28 nc 2 gate - s ource charge q gs 6 nc 2 gate - d rain charge q gd 12 nc 2 turn - o n delay time td (on) vgs = - 10 v, vds = - 1 5 v id = - 1a, r l = 1 , rgen = 6 20 ns 2 turn - o n rise t ime t r 17 ns 2 turn - o ff delay time td ( of f ) 160 ns 2 turn - o ff fall t ime t f 75 ns 2 body - diode reverse recovery time trr if =- 5 a, dif/dt = 100a / s 15.5 ns body - diode reverse recovery charge qrr 7.9 nc note : 1. p ulse test : pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. complem entary mosfet t a = 25 c . u nless otherwise noted.
6 elm34601aa - n 7 - typical electrical and thermal characteristics (p-ch) 6 may-21-2004 n- & p-channel enhancement mode field effect transistor p2103nvg sop-8 lead-free complem entary mosfet
7 elm34601aa - n 7 - 7 may-21-2004 n- & p-channel enhancement mode field effect transistor p2103nvg sop-8 lead-free niko-sem complem entary mosfet
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